Elevated transition temperature in Ge doped VO2 thin films

被引：67

作者：

Krammer, Anna ^{[1
]}

Magrez, Arnaud ^{[2
]}

Vitale, Wolfgang A. ^{[3
]}

Mocny, Piotr ^{[4
]}

Jeanneret, Patrick ^{[5
]}

Guibert, Edouard ^{[5
]}

Whitlow, Harry J. ^{[5
,6
,7
]}

Ionescu, Adrian M. ^{[3
]}

Schuler, Andreas ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Solar Energy & Bldg Phys Lab LESO PB, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys ICMP, CH-1015 Lausanne, Switzerland

[3] Ecole Polytech Fed Lausanne, Nanoelectron Devices Lab NanoLab, CH-1015 Lausanne, Switzerland

[4] Ecole Polytech Fed Lausanne, LP, CH-1015 Lausanne, Switzerland

[5] Univ Appl Sci HES SO, Surface Engn Grp Ionlab Arc, CH-2300 La Chaux De Fonds, Switzerland

[6] Univ Louisiana Lafayette, Louisiana Accelerator Ctr, Lafayette, LA 70506 USA

[7] Univ Louisiana Lafayette, Dept Phys, Lafayette, LA 70506 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 122卷 / 04期

基金：

欧盟地平线“2020”;

关键词：

METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; PHASE-TRANSITION; THERMOCHROMIC VO2; MOTT-HUBBARD; SEMICONDUCTOR; V1-XWXO2; HYSTERESIS; CRYSTALS; PEIERLS;

D O I：

10.1063/1.4995965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (similar to 95 degrees C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications-where higher critical temperatures than 68 degrees C of pristine VO2 are needed-a viable and promising solution. Published by AIP Publishing.

引用

页数：6

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