Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection

被引：57
作者：
Li, H. W.
Kardynal, B. E.
See, P.
Shields, A. J.
Simmonds, P.
Beere, H. E.
Ritchie, D. A.
机构：
[1] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0GZ, England
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期
关键词：
D O I：
10.1063/1.2768884
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors present a quantum dot (QD) based single photon detector operating at a fiber optic telecommunication wavelength. The detector is based on an AlAs/In0.53Ga0.47As/AlAs double-barrier resonant tunneling diode containing a layer of self-assembled InAs QDs grown on an InP substrate. The device shows an internal efficiency of about 6.3% with a dark count rate of 1.58x10(-6) ns(-1) for 1310 nm photons. (C) 2007 American Institute of Physics.
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页数：3
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