Synthesis of β-Ga2O3 nanowires as a broadband emitter

被引：11

作者：

Tien, L. C. ^{[1
]}

Ho, C. H. ^{[2
,3
]}

Yao, X. T. ^{[1
]}

Cai, J. R. ^{[1
]}

机构：

[1] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Shoufeng 974, Hualien, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Grad Inst Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 102卷 / 01期

关键词：

ELECTRICAL-PROPERTIES; SINGLE; PHOTOLUMINESCENCE; NANOSTRUCTURES; LUMINESCENCE; GROWTH; GREEN; BLUE;

D O I：

10.1007/s00339-010-6094-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-density monoclinic beta-Ga2O3 nanowires were synthesized by a vapor transport method with controlled ambient oxygen. The structures and morphology were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM). X-ray diffraction and HR-TEM analysis indicate that the as-grown beta-Ga2O3 nanowires are single crystals with monoclinic structure. Intense four-band emissions covering the range from ultraviolet (UV) to visible were observed in photoluminescence (PL) spectra at room temperature. The main emission bands of deep blue (3.04 eV) to green (2.37 eV) for beta-Ga2O3 nanowires were adjusted by controlling the partial pressure of oxygen. This work demonstrates a low-cost and facile process for optoelectronics applications.

引用

页码：105 / 108

页数：4

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