Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering

被引：60

作者：

Hsu, Che-Wei ^{[1
]}

Cheng, Tsung-Chieh ^{[2
]}

Yang, Chun-Hui ^{[3
]}

Shen, Yi-Ling ^{[3
]}

Wu, Jong-Shinn ^{[1
]}

Wu, Sheng-Yao ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu 30010, Taiwan

[2] Natl Kaohsiung Univ Appl Sci, Dept Mech Engn, Kaohsiung 807, Taiwan

[3] Natl Nano Device Labs, Hsinchu 30078, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 05期

关键词：

Zinc oxide; Radio frequency; Sputtering; Target poisoning; X-ray diffraction; X-ray photoelectron spectroscopy; LOW-EMISSIVITY COATINGS; ZINC-OXIDE; ELECTRICAL-PROPERTIES; DOPED ZNO; PLASMA; ORIENTATION; TEMPERATURE; DEPOSITION; MECHANISM; PRESSURE;

D O I：

10.1016/j.jallcom.2010.10.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We deposited a ZnO thin film on a microslide glass substrate at room temperature by employing the RF reactive magnetron sputtering process. Our results revealed that deposition rate decreases by increasing O-2/(Ar + O-2) ratio that was caused by two mechanisms. The first mechanism was the reduction of plasma density and, thus, argon ion density; caused by the addition of highly electronegative oxygen. While the second mechanism was target poisoning caused by the oxidation of the target. Additionally, at the O-2/(Ar + O-2) ratio of similar to 0.3 and the help of XPS analysis the optimum stoichiometry of ZnO thin film (the highest binding energy and content fraction of O-1 peak (O-Zn bond)) and the best polycrystallinity (the lowest FWHM with largest grain size) was found. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1774 / 1776

页数：3

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