Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices

被引：28

作者：

Chen, Kai-Huang ^{[1
]}

Kao, Ming-Cheng ^{[2
]}

Huang, Shou-Jen ^{[3
]}

Li, Cheng-Ying ^{[4
]}

Cheng, Chien-Min ^{[4
]}

Wu, Sean ^{[1
]}

Wu, Zong-Hsun ^{[4
]}

机构：

[1] Tung Fang Design Inst, Dept Elect Engn & Comp Sci, Kaohsiung, Taiwan

[2] Hsiuping Univ Sci & Technol, Dept Elect Engn, Taichung, Taiwan

[3] Tung Fang Design Inst, Dept Tourism & Leisure Management, Kaohsiung, Taiwan

[4] Southern Taiwan Univ Sci & Technol, Dept Elect Engn, Tainan, Taiwan

来源：

CERAMICS INTERNATIONAL | 2017年 / 43卷

关键词：

Manganese oxide; Thermal annealing process; Bipolar switching properties; RRAM; RANDOM-ACCESS MEMORY; THIN-FILMS;

D O I：

10.1016/j.ceramint.2017.05.183

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical conduction mechanism and bipolar resistive switching properties of the manganese oxide thin films resistive random access memory (RRAM) devices for high resistive status and low resistive status (HRS/LRS) were investigated and discussed. The electrical and physical properties of post-treatment manganese oxide thin films for different oxygen concentration parameters were measured by x-ray diffraction (XRD) and operation current versus applied voltage (I-V) measurement. For I-V curves in different temperature, the ohmic conduction, space charge limited conduction (SCLC), schotticy emission conduction, and hopping conduction mechanism of manganese oxide RRAM devices were discussed and verified in initial metallic filament path forming process. Finally, the excess oxygen ions, vacancy, and defect factor resulting in bipolar and unipolar resistive switching behavior of thin films RRAM devices will be explained and investigated by metallic filament path forming model.

引用

页码：S253 / S257

页数：5

共 20 条

[1] The Effect of Silicon Oxide Based RRAM with Tin Doping [J].

Chang, Kuan-Chang ;

Tsai, Tsung-Ming ;

Chang, Ting-Chang ;

Syu, Yong-En ;

Chuang, Siang-Lan ;

Li, Cheng-Hua ;

Gan, Der-Shin ;

Sze, Simon M. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (03) :H65-H68

[2] Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment [J].

Chang, Kuan-Chang ;

Tsai, Tsung-Ming ;

Chang, Ting-Chang ;

Syu, Yong-En ;

Wang, Chia-C. ;

Chuang, Siang-Lan ;

Li, Cheng-Hua ;

Gan, Der-Shin ;

Sze, Simon M. .

APPLIED PHYSICS LETTERS, 2011, 99 (26)

[3]

Chen K. H., 2007, JPN J APPL PHYS, V46, p7A

[4] Effects of laser annealing on the electrical characteristics of dynamic random access memory using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin films [J].

Chen, Kai-Huang ;

Chen, Ying-Chung ;

Yang, Cheng-Fu ;

Chen, Zhi-Sheng ;

Chang, Ting-Chang .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (7A) :4197-4199

[5] Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode [J].

Chen, Kai-Huang ;

Chang, Kuan-Chang ;

Chang, Ting-Chang ;

Tsai, Tsung-Ming ;

Liang, Shu-Ping ;

Young, Tai-Fa ;

Syu, Yong-En ;

Sze, Simon M. .

NANOSCALE RESEARCH LETTERS, 2016, 11

[6] Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates [J].

Chen, Kai-Huang ;

Chang, Ting-Chang ;

Chang, Guan-Chang ;

Hsu, Yung-En ;

Chen, Ying-Chung ;

Xu, Hong-Quan .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (01) :291-295

[7] The Influence of Annealing Process on Physical and Electrical Characteristics of (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 Thin Films [J].

Chen, Kai-Huang ;

Yang, Cheng-Fu .

FERROELECTRICS, 2009, 381 :59-66

[8]

CHEN KH, 2016, NANOSCALE RES LETT, V11

[9] A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Huang, Sheng-Yao ;

Chang, Kuan-Chang ;

Li, Hung-Wei ;

Chen, Shih-Ching ;

Lu, Jin ;

Shi, Yi .

APPLIED PHYSICS LETTERS, 2009, 94 (16)

[10] Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing [J].

Feng, Li-Wei ;

Chang, Chun-Yen ;

Chang, Yao-Feng ;

Chang, Ting-Chang ;

Wang, Shin-Yuan ;

Chen, Shih-Ching ;

Lin, Chao-Cheng ;

Chen, Shih-Cheng ;

Chiang, Pei-Wei .

APPLIED PHYSICS LETTERS, 2010, 96 (22)

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