Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells

被引：6
作者：
Arnaudov, B [1 ]
Paskova, T
Valassiades, O
Paskov, PP
Evtimova, S
Monemar, B
Heuken, M
机构：
[1] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[3] Aristotle Univ Thessaloniki, Solid State Phys Sect, Thessaloniki 54124, Greece
[4] AIXTRON AG, D-52072 Aachen, Germany
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期
关键词：
D O I：
10.1063/1.1613999
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study longitudinal electron transport in InGaN/GaN multiple quantum wells (MQWs) at moderate magnetic fields. We observe a stepwise behavior of both the Hall coefficient and magnetoresistivity. The peculiarities are explained by a magnetic-field-induced localization of electrons in a two-dimensional (2D) potential relief of the InGaN MQW due to composition fluctuations. We extend the model for a magnetic localization of electrons, treating every QW like a quasi-2D system with a cylindrical potential relief. The calculated values of the decrease of the sheet electron concentrations in a magnetic field based on such an assumption for 2D density of states in a InGaN MQW system are in good accordance with the experimentally obtained values. (C) 2003 American Institute of Physics.
引用
收藏
页码：2590 / 2592
页数：3
相关论文
共 15 条
[1]  
Arnaudov B, 2002, PHYS STATUS SOLIDI B, V234, P872, DOI 10.1002/1521-3951(200212)234:3<872::AID-PSSB872>3.0.CO
[2]  
2-0
[3]   Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm [J].
Chichibu, SF ;
Azuhata, T ;
Sota, T ;
Mukai, T .
APPLIED PHYSICS LETTERS, 2001, 79 (03) :341-343
[4]   Luminescence spectra from InGaN multiquantum wells heavily doped with Si [J].
Deguchi, T ;
Shikanai, A ;
Torii, K ;
Sota, T ;
Chichibu, S ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1998, 72 (25) :3329-3331
[5]  
DENEV S, 2002, PHYS REV B, V66, P20534
[6]  
Goldys EM, 2001, MRS INTERNET J N S R, V6
[7]   EFFECT OF A MAGNETIC FIELD ON DONOR IMPURITY LEVELS IN INSB [J].
KEYES, RW ;
SLADEK, RJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (03) :143-145
[8]   Exciton luminescence of quasi-two-dimensional solid solutions [J].
Klochikhin, A ;
Reznitskii, A ;
Tenishev, L ;
Permogorov, S ;
Ivanov, S ;
Sorokin, S ;
Mumanis, K ;
Seisyan, R ;
Klingshirn, C .
JETP LETTERS, 2000, 71 (06) :242-245
[9]   Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells [J].
Kuokstis, E ;
Zhang, J ;
Ryu, MY ;
Yang, JW ;
Simin, G ;
Khan, MA ;
Gaska, R ;
Shur, MS .
APPLIED PHYSICS LETTERS, 2001, 79 (26) :4375-4377
[10]   Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers [J].
Mavroidis, C ;
Harris, JJ ;
Jackman, RB ;
Harrison, I ;
Ansell, BJ ;
Bougrioua, Z ;
Moerman, I .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :9835-9840
12