Ripening mechanisms in ultrathin metal films

被引：9

作者：

Rosenfeld, G ^{[1
]}

Esser, M ^{[1
]}

Morgenstern, K ^{[1
]}

Comsa, G ^{[1
]}

机构：

[1] Univ Twente, Fac Appl Phys, NL-7500 AE Enschede, Netherlands

来源：

MECHANISMS AND PRINCIPLES OF EPITAXIAL GROWTH IN METALLIC SYSTEMS | 1998年 / 528卷

关键词：

D O I：

10.1557/PROC-528-111

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Results of recent experimental model studies on ripening of submonolayer films via Ostwald ripening and dynamic coalescence are described. The experiments have been performed on ensembles of Ag-adatom or vacancy islands on a Ag(111) surface using Scanning Tunneling Microscopy. For Ostwald ripening of adatom islands, deviations from the classical mean-field ripening behaviour are observed which show up as pronounced local correlations in island decay and growth rates. For ripening via dynamic coalescence which is studied for ensembles of vacancy islands, it is found that the increase of the average island size with time in the late-stage regime is correctly described by the classical binary collision model.

引用

页码：111 / 124

页数：14