Photoluminescence measurements in Be-δ-doped back-gated quantum well

被引：3

作者：

Yamaguchi, M

Nomura, S

Sato, D

Akazaki, T

Tamura, H

Takayanagi, H

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

SURFACE SCIENCE | 2005年 / 583卷 / 01期

关键词：

photoluminescence; quantum well; 2DES;

D O I：

10.1016/j.susc.2005.01.058

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We measured the photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate. The electron density is controlled by means of the back-gate voltage. We estimated the electron density using the magneto-optical method and the PL linewidth, and also by undertaking transport measurements. We show that a uniform 2DES as large as 1 mm(2) is induced by the back-gate operation from 2.5 x 10(10) cm(-2). This experiment indicates that optical measurement with a back-gated QW is advantageous for studying the low-density 2DES. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：94 / 99

页数：6

相关论文

共 14 条

[1] EXCITONIC ENHANCEMENT OF THE FERMI-EDGE SINGULARITY IN A DENSE 2-DIMENSIONAL ELECTRON-GAS [J].

CHEN, W ;

FRITZE, M ;

WALECKI, W ;

NURMIKKO, AV ;

ACKLEY, D ;

HONG, JM ;

CHANG, LL .

PHYSICAL REVIEW B, 1992, 45 (15) :8464-8477

[2] OPTICAL STUDIES OF A GAAS QUANTUM-WELL BASED FIELD-EFFECT TRANSISTOR [J].

DELALANDE, C ;

ORGONASI, J ;

BRUM, JA ;

BASTARD, G ;

VOOS, M ;

WEIMANN, G ;

SCHLAPP, W .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1346-1348

[3] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[4] OPTICAL SPECTROSCOPY OF A 2-DIMENSIONAL ELECTRON-GAS NEAR THE METAL-INSULATOR-TRANSITION [J].

FINKELSTEIN, G ;

SHTRIKMAN, H ;

BARJOSEPH, I .

PHYSICAL REVIEW LETTERS, 1995, 74 (06) :976-979

[5] Effect of screening by two-dimensional charge carriers on the binding energy of excitonic states in GaAs/AlGaAs quantum wells [J].

Gubarev, SI ;

Volkov, OV ;

Koval'skii, VA ;

Kulakovskii, DV ;

Kukushkin, IV .

JETP LETTERS, 2002, 76 (09) :575-578

[6] MAGNETOOPTICS OF ACCEPTOR-DOPED GAAS/GA1-XALXAS HETEROSTRUCTURES IN THE QUANTUM HALL REGIME - RESONANT MAGNETOEXCITONS AND MANY-ELECTRON EFFECTS [J].

HAWRYLAK, P ;

PULSFORD, N ;

PLOOG, K .

PHYSICAL REVIEW B, 1992, 46 (23) :15193-15199

[7] Two-dimensional electron gas formed in a back-gated undoped heterostructure [J].

Hirayama, Y ;

Muraki, K ;

Saku, T .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1745-1747

[8] Free GaAs surfaces studied using a back-gated undoped GaAs/AlxGa1-xAs heterostructure -: art. no. 245309 [J].

Kawaharazuka, A ;

Saku, T ;

Kikuchi, CA ;

Horikoshi, Y ;

Hirayama, Y .

PHYSICAL REVIEW B, 2001, 63 (24)

[9] REDUCTION OF THE ELECTRON-DENSITY IN GAAS-ALXGA1-XAS SINGLE HETEROJUNCTIONS BY CONTINUOUS PHOTOEXCITATION [J].

KUKUSHKIN, IV ;

VONKLITZING, K ;

PLOOG, K ;

KIRPICHEV, VE ;

SHEPEL, BN .

PHYSICAL REVIEW B, 1989, 40 (06) :4179-4182

[10] Resistivity of dilute 2D electrons in an undoped GaAs heterostructure [J].

Lilly, MP ;

Reno, JL ;

Simmons, JA ;

Spielman, IB ;

Eisenstein, JP ;

Pfeiffer, LN ;

West, KW ;

Hwang, EH ;

Das Sarma, S .

PHYSICAL REVIEW LETTERS, 2003, 90 (05) :4-056806