Photoluminescence study of p-type ZnO:Sb prepared by thermal oxidation of the Zn-Sb starting material

被引：73

作者：

Przezdziecka, E. ^{[1
]}

Kaminska, E. ^{[2
]}

Pasternak, I. ^{[2
]}

Piotrowska, A. ^{[2
]}

Kossut, J. ^{[1
,3
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[3] ERATO, Semicond Spintron Project, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.76.193303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated photoluminescence (PL) from Sb-doped p-type ZnO films obtained by thermal oxidation of the Zn-Sb starting material. Very well resolved PL spectra were obtained from samples, with the hole concentration above 1x10(17) cm(-3). Acceptor binding energy is determined to be 137 meV from free electron to acceptor transitions. The binding energy between the acceptor and the exciton obtained from the analysis of the acceptor bound excitonic PL transitions measured as a function of temperature is 12-15 meV.

引用

页数：4

共 37 条

[1]

Aoki T, 2002, PHYS STATUS SOLIDI B, V229, P911, DOI 10.1002/1521-3951(200201)229:2<911::AID-PSSB911>3.0.CO

[2]

2-R

[3] Electro-optical and structural properties of thin ZnO films, prepared by filtered vacuum arc deposition [J].

David, T ;

Goldsmith, S ;

Boxman, RL .

THIN SOLID FILMS, 2004, 447 :61-67

[4] ACCEPTOR-EXCITON COMPLEXES IN ZNO - A COMPREHENSIVE ANALYSIS OF THEIR ELECTRONIC STATES BY HIGH-RESOLUTION MAGNETO-OPTICS AND EXCITATION SPECTROSCOPY [J].

GUTOWSKI, J ;

PRESSER, N ;

BROSER, I .

PHYSICAL REVIEW B, 1988, 38 (14) :9746-9758

[5] PHOTOLUMINESCENCE OF DEFECT-EXCITON COMPLEXES IN 2-6 COMPOUNDS [J].

HALSTED, RE ;

AVEN, M .

PHYSICAL REVIEW LETTERS, 1965, 14 (03) :64-&

[6] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].

HAYNES, JR .

PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363

[7] Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].

Hwang, DK ;

Kim, HS ;

Lim, JH ;

Oh, JY ;

Yang, JH ;

Park, SJ ;

Kim, KK ;

Look, DC ;

Park, YS .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[8] Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2 [J].

Kaminska, E ;

Piotrowska, A ;

Kossut, J ;

Barcz, A ;

Butkute, R ;

Dobrowolski, W ;

Dynowska, E ;

Jakiela, R ;

Przezdziecka, E ;

Lukasiewicz, R ;

Aleszkiewicz, M ;

Wojnar, P ;

Kowalczyk, E .

SOLID STATE COMMUNICATIONS, 2005, 135 (1-2) :11-15

[9]

KAMINSKA E, 2007, MRS S P, V957

[10] Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film [J].

Kang, Hong Seong ;

Kim, Gun Hee ;

Kim, Dong Lim ;

Chang, Hyun Woo ;

Du Ahn, Byung ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2006, 89 (18)

← 1 2 3 4 →