12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710 GHz and fMAX=340 GHz -: art. no. 252109

被引：50

作者：

Hafez, W ^{[1
]}

Snodgrass, W ^{[1
]}

Feng, M ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期

关键词：

The authors are grateful the support of Dr. Mark Roskar from DARPA-MTO. W.H. is grateful for the support of the Intel Fellowship and Stillman Fellowship. W.S. is grateful to the University of Illinois Diffenbaugh Fellowship. M.F. is grateful for the support of the Nick Holonyak; Jr. Chair Professorship;

D O I：

10.1063/1.2149510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pseudomorphic collector structure is known to allow enhanced collector transport, facilitating higher current cutoff frequencies at lower current densities and junction temperatures compared to traditional single heterojunction structures. The performance of a 0.25x3 mu m(2) pseudomorphic heteojunction bipolar transistors achieves peak f(T) of 710 GHz (f(MAX)=340 GHz) at a collector current density of 20 mA/mu m(2). The same device achieves a f(T)/f(MAX) of 540/407 GHz at a reduced current density of 7.5 mA/mu m(2). The epitaxial structure employs a 12.5 nm strained InGaAs base and 55 nm InGaAs collector, and exhibits a beta of 115 and breakdown voltage of BVCEO=1.75 V. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3