Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers

被引：34

作者：

Lu, Tien-Chang ^{[1
,2
]}

Wu, Tzeng-Tsong ^{[1
,2
]}

Chen, Shih-Wei ^{[1
,2
]}

Tu, Po-Min ^{[1
,2
]}

Li, Zhen-Yu ^{[1
,2
]}

Chen, Chien-Kang ^{[1
,2
]}

Chen, Cheng-Hung ^{[1
,2
]}

Kuo, Hao-Chung ^{[1
,2
]}

Wang, Shing-Chung ^{[1
,2
]}

Zan, Hsiao-Wen ^{[1
,2
]}

Chang, Chun-Yen ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 06期

关键词：

Distributed Bragg reflectors (DBRs); GaN; vertical-cavity surface-emitting laser (VCSEL); ROOM-TEMPERATURE; BLUE; OPERATION; PERFORMANCE; FABRICATION; EMISSION;

D O I：

10.1109/JSTQE.2011.2116771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta2O5/SiO2 top DBR, a 7 lambda-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.

引用

收藏

页码：1594 / 1602

页数：9

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