Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

被引：6

作者：

Trinkaus, H. ^{[1
,2
]}

Buca, D. ^{[1
,2
]}

Minamisawa, R. A. ^{[1
,2
]}

Hollaender, B. ^{[1
,2
]}

Luysberg, M. ^{[3
,4
]}

Mantl, S. ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 9 IT 9, D-52425 Julich, Germany

[2] Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany

[3] Forschungszentrum Julich, Peter Grunberg Inst 5 PGI 5, D-52425 Julich, Germany

[4] Forschungszentrum Julich, ER C Ernst Ruska Ctr, D-52425 Julich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 01期

关键词：

ION-IMPLANTATION; SI1-XGEX/SI(100) HETEROSTRUCTURES; DISLOCATION LOOPS; SILICON; SIGE; EVOLUTION; DEFECTS;

D O I：

10.1063/1.3672447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plastic strain relaxation of SiGe layers of different crystal orientations is analytically analyzed and compared with experimental results. First, strain relaxation induced by ion implantation and annealing, considering dislocation loop punching and loop interactions with interfaces/surfaces is discussed. A flexible curved dislocation model is used to determine the relation of critical layer thickness with strain/stress. Specific critical conditions to be fulfilled, at both the start and end of the relaxation, are discussed by introducing a quality parameter for efficient strain relaxation, defined as the ratio of real to ideal critical thickness versus strain/stress. The anisotropy of the resolved shear stress is discussed for (001) and (011) crystal orientations in comparison with the experimentally observed anisotropy of strain relaxation for Si/SiGe heterostructures. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3672447]

引用

页数：8

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