Extenuated interlayer scattering in double-layered graphene/hexagonal boron nitride heterostructure

被引：9
作者：
Jain, Nikhil [1 ]
Yang, Fan [1 ]
Jacobs-Gedrim, Robin B. [1 ]
Xu, Xu [2 ]
Anantram, M. P. [2 ]
Yu, Bin [1 ]
机构：
[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
[2] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
来源：
CARBON | 2018年 / 126卷
基金：
美国国家科学基金会;
关键词：
GRAPHENE; STRENGTH;
D O I：
10.1016/j.carbon.2017.09.074
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Interlayer carrier scattering hampers electrical conduction in two-dimensional layered nanostructures. Extenuated carrier scattering is observed in a double-layered graphene system with hexagonal boron nitride (h-BN) as an interposer. Raman spectrum shows signature peaks with enhanced sharpness as compared with that of bilayer graphene. The density functional theory simulation shows degenerate energy bands in the E-k dispersion. The decoupling of the two graphene monolayers is further confirmed by electrical conduction measurements. Improved carrier mobility is observed in the graphene/h-BN/graphene heterostructure as compared with exfoliated or randomly-stacked graphene bilayer, indicating preserved Fermi velocity. The demonstrated behavior in graphene/h-BN/graphene heterostructure suggests a pathway to preserve the excellent carrier transport of pristine graphene monolayer in a multichannel configuration, leading to implementation of highly conductive 2D heterostructure systems. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：17 / 22
页数：6
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