Bulk GaN crystals and wafers grown by HVPE without intentional doping

被引：12

作者：

Lucznik, Boleslaw ^{[1
]}

Pastuszka, Bogdan ^{[1
]}

Weyher, Jan L. ^{[1
]}

Kamler, Grzegorz ^{[1
]}

Grzegory, Izabella ^{[1
]}

Porowski, Sylwester ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

10;

D O I：

10.1002/pssc.200880794

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, bulk crystals of GaN were grown in multiple HVPE runs in order to get about 5 mm thick samples. Then the crystals were sliced in both polar and non-polar orientations. Dominant morphological defects in GaN bulk crystals grown by HVPE on (0001) oriented substrates are polygonal pits of various depths. Since the pits are composed of semipolar surfaces, it is possible to recover their formation and growth history by optical microscopy and photochemical etching sensitive to the fluctuations in concentration of point defects. For example dark triangles on the non-polar slice in the figure are traces of pits moving along growth direction thus leaving highly oxygen doped trace underneath. Analysis of distribution, properties and origin of these defects, based on measurements of polar and non-polar slices of the bulk crystals is presented. One of reasons for the pits formation are inversion domains generated at different stages of the HVPE growth. [GRAPHICS] Non-polar (10 (1) over bar0) slice of thick GaN crystal grown in 4 HVPE runs. The inverted pyramid pit nr 1 starts from the bottom and recovers in every subsequent growth run. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S297 / S300

页数：4

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