Group IV Mid-Infrared Devices and Circuits

被引：1

作者：

Mashanovich, G. Z. ^{[1
]}

Penades, J. Soler ^{[1
]}

Cao, W. ^{[1
]}

Qu, Z. ^{[1
]}

Osman, A. ^{[1
]}

Wu, Y. ^{[1
]}

Khokhar, A. Z. ^{[1
]}

Littlejohns, C. J. ^{[1
]}

Stankovic, S. ^{[1
]}

Reynolds, S. ^{[1
]}

Mittal, V. ^{[1
]}

Murugan, G. S. ^{[1
]}

Wilkinson, J. S. ^{[1
]}

Qi, Y. ^{[1
]}

Gardes, F. Y. ^{[1
]}

Thomson, D. J. ^{[1
]}

Nedeljkovic, M. ^{[1
]}

机构：

[1] Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XXII | 2018年 / 10535卷

基金：

英国工程与自然科学研究理事会;

关键词：

Silicon; germanium; mid-infrared; waveguides; modulators; SILICON WAVE-GUIDES; ALL-OPTICAL MODULATION; MU-M; SUPERCONTINUUM GENERATION; WAVELENGTH RANGE; CHIP;

D O I：

10.1117/12.2289531

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelength region and we report several active and passive devices realised in these materials. We particularly focus on devices and circuits for wavelengths longer than 7 micrometers.

引用

页数：6

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