The growth of Si1-x-yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition

被引：2

作者：

Huang, JY ^{[1
]}

Ye, ZZ ^{[1
]}

Qi, ZL ^{[1
]}

Que, D ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1023/A:1010977331722

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Partially compensated SiGeC with high CV content was grown using ultra-high vacuum chemical vapor deposition (UHV/CVD) system. High resolution electron transmission microscope (HRTEM) was applied to analyze the microstructure of the samples. X-ray diffraction (XRD), Second ion mass spectroscope (FTIR) and Raman spectrum were also used to characterize the alloys. The feasibility of adjusting the strain in pseudomorphic SiGe layers by adding small amounts of carbon was confirmed. Furthermore, well-matched interface and high quality epilayers were obtained because of the presence of C.

引用

页码：1173 / 1175

页数：3

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