Photonic Crystal Lasers Fabricated by MOVPE Based on Organic Arsenic Source

被引:15
作者
De Zoysa, M. [1 ]
Yoshida, M. [1 ]
Kawasaki, M. [2 ]
Ishizaki, K. [1 ]
Hatsuda, R. [1 ]
Tanaka, Y. [1 ]
Noda, S. [1 ]
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Mitsubishi Electr Corp, Amagasaki, Hyogo 6618661, Japan
关键词
Semiconductor lasers; photonic crystals;
D O I
10.1109/LPT.2017.2748980
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate the characteristics of photonic crystal lasers fabricated by air hole retained regrowth using metal-organic vapor-phase epitaxy based on an organic arsenic source [tertiary-butyl arsine (TBAs)]. TBAs has the advantage of high decomposition efficiency compared with AsH3, which enables us to achieve a unique air hole shape under the crystal regrowth. We demonstrate that photonic crystal lasers with an area of 200 x 200 mu m(2) exhibit single-mode lasing with a low lasing threshold of similar to 0.5 kAcm(-2). The effect of the unique shape of the air holes obtained by the TBAs-based regrowth on the laser performance is discussed using coupled-wave theory.
引用
收藏
页码:1739 / 1742
页数:4
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