Electron-phonon coupling in semiconductors within the GW approximation

被引:77
作者
Karsai, Ferenc [1 ]
Engel, Manuel [1 ]
Kresse, Georg [1 ]
Flage-Larsen, Espen [2 ]
机构
[1] Univ Vienna, Dept Phys, Vienna, Austria
[2] SINTEF Mat Phys, Oslo, Norway
基金
奥地利科学基金会;
关键词
electron-phonon interaction; GW approximation; density-functional theory; band gap renormalization; TEMPERATURE-DEPENDENCE; DIRECT-GAP; OPTICAL-PROPERTIES; BANDS; CONVERGENCE; PERFORMANCE; ENERGIES; SCHEMES; ISOTOPE; DIAMOND;
D O I
10.1088/1367-2630/aaf53f
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The magnitude of the renormalization of the band gaps due to zero-point motions of the lattice is calculated for 18 semiconductors, including diamond and silicon. This particular collection of semiconductors constitute a wide range of band gaps and atomic masses. The renormalized electronic structures are obtained using stochastic methods to sample the displacement related to the vibrations in the lattice. Specifically, a recently developed one-shot method is utilized where only a single calculation is needed to get similar results as the one obtained by standard Monte-Carlo sampling. In addition, a fast real-space GW method is employed and the effects of G(0)W(0) corrections on the renormalization are also investigated. We find that the band-gap renormalizations inversely depend on the mass of the constituting ions, and that for the majority of investigated compounds the G o W o corrections to the renormalization are very small and thus not significant.
引用
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页数:13
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