Structure and properties of Bi2O3 doped Bi(Mg1/2Ti1/2)O3-0.38PbTiO3 ceramics with MPB composition

被引：0

作者：

Zhang, Qiang ^{[1
]}

Li, Zhenrong ^{[2
]}

机构：

[1] Xian Univ Architecture & Technol, Funct Mat Lab, Xian 710055, Peoples R China

[2] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Peoples R China

来源：

JOURNAL OF ELECTROCERAMICS | 2016年 / 36卷 / 1-4期

关键词：

Piezoelectric ceramics; High Curie temperature; Bi2O3; doped; Dielectric loss; ELECTRICAL-PROPERTIES; PIEZOELECTRIC SYSTEM; SOLID-SOLUTION; SENSOR;

D O I：

10.1007/s10832-015-0010-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

0.62Bi(Mg1/2Ti1/2)O-3-0.38PbTiO(3)-xwt%Bi2O3 (BMT-0.38PT-xBi(2)O(3)) ceramics were prepared by conventional powder-processing method. It indicated that the morphotropic phase boundary (MPB) region located in 0.0 a parts per thousand currency sign x a parts per thousand currency sign 0.3. For x = 0.3, it exhibited good piezoelectric properties, d(33) similar to 245pC/N and k(p) similar to 40 %. With the increase of Bi2O3 content, the Curie temperature (T-c) was found to increase, and the dielectric loss was found to decrease above 200 A degrees C compared with BMT-0.38PT sample. Finally, it can be found that depolarization temperature was around 350 A degrees C by thermal depoling method.

引用

页码：16 / 20

页数：5

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