Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors

被引:1
作者
Xu, Hongyuan [1 ]
Wang, Xu [2 ]
Hu, Daobing [2 ]
Zheng, Feng [2 ]
Xiao, Juncheng [2 ]
Lu, Lei [1 ]
Zhang, Shengdong [1 ]
机构
[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[2] TCL China Star Optoelect Technol Co Ltd, Shenzhen 518055, Peoples R China
关键词
Blue laser diode annealing; Bottom gate; BIAS STRESS; TFTS; DEGRADATION; TECHNOLOGY; DEHYDROGENATION;
D O I
10.1016/j.mssp.2022.107113
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The low-temperature poly-Si (LTPS) thin-film transistor (TFT) with bottom-gate architecture was successfully developed using the blue laser diode annealing (BLDA) technology. The amorphous silicon (a-Si) was successfully recrystallized by BLDA into LTPS with grain sizes ranging from 0.1 mu m to 0.3 mu m. With the proper pre -dehydration treatment of a-Si and optimized BLDA conditions, the bottom-gate LTPS TFTs achieved superior performance than a-Si TFTs, including a mobility up to 15.87 cm2/Vs. Moreover, such BLDA-enabled bottom -gate LTPS TFT is fully compatible with the incumbent a-Si production line, thus providing a new cost-efficient technology for large-area electronics.
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页数:8
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