Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors

被引：1

作者：

Xu, Hongyuan ^{[1
]}

Wang, Xu ^{[2
]}

Hu, Daobing ^{[2
]}

Zheng, Feng ^{[2
]}

Xiao, Juncheng ^{[2
]}

Lu, Lei ^{[1
]}

Zhang, Shengdong ^{[1
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

[2] TCL China Star Optoelect Technol Co Ltd, Shenzhen 518055, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 152卷

关键词：

Blue laser diode annealing; Bottom gate; BIAS STRESS; TFTS; DEGRADATION; TECHNOLOGY; DEHYDROGENATION;

D O I：

10.1016/j.mssp.2022.107113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-temperature poly-Si (LTPS) thin-film transistor (TFT) with bottom-gate architecture was successfully developed using the blue laser diode annealing (BLDA) technology. The amorphous silicon (a-Si) was successfully recrystallized by BLDA into LTPS with grain sizes ranging from 0.1 mu m to 0.3 mu m. With the proper pre -dehydration treatment of a-Si and optimized BLDA conditions, the bottom-gate LTPS TFTs achieved superior performance than a-Si TFTs, including a mobility up to 15.87 cm2/Vs. Moreover, such BLDA-enabled bottom -gate LTPS TFT is fully compatible with the incumbent a-Si production line, thus providing a new cost-efficient technology for large-area electronics.

引用

页数：8

共 28 条

[1] Micro silicon technology for active matrix OLED display [J].

Arai, Toshiaki ;

Morosawa, Narihiro ;

Hiromasu, Yasunobu ;

Hidaka, Koji ;

Nakayama, Tetsuo ;

Makita, Atsuya ;

Toyota, Motohiro ;

Hayashi, Naoki ;

Yoshimura, Yusuke ;

Sato, Ayumu ;

Namekawa, Kimiyasu ;

Inagaki, Yoshio ;

Umezu, Nobuhiko ;

Tatsuki, Koichi .

2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II, 2007, 38 :1370-1373

[2] A Hybrid AMOLED Driver IC for Real-Time TFT Nonuniformity Compensation [J].

Bang, Jun-Suk ;

Kim, Hyun-Sik ;

Kim, Ki-Duk ;

Kwon, Oh-Jo ;

Shin, Choong-Sun ;

Lee, Joohyung ;

Cho, Gyu-Hyeong .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (04) :966-978

[3] Effect of Grain Boundary Protrusion on Electrical Performance of Low Temperature Polycrystalline Silicon Thin Film Transistors [J].

Billah, Mohammad Masum ;

Siddik, Abu Bakar ;

Kim, Jung Bae ;

Zhao, Lai ;

Choi, Soo Young ;

Yim, Dong Kil ;

Jang, Jin .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) :503-511

[4] LTPS TFT Process on Polyimide Substrate for Flexible AMOLED [J].

Gao, Xiaoyu ;

Lin, Li ;

Liu, Yucheng ;

Huang, Xiuqi .

JOURNAL OF DISPLAY TECHNOLOGY, 2015, 11 (08) :666-669

[5] Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors [J].

Huang, Shin-Ping ;

Chen, Po-Hsun ;

Chen, Hong-Chih ;

Zheng, Yu-Zhe ;

Chu, Ann-Kuo ;

Tsao, Yu-Ching ;

Shih, Yu-Shan ;

Wang, Yu-Xuan ;

Wu, Chia-Chuan ;

Lai, Wei-Chih ;

Chang, Ting-Chang .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (10) :1638-1641

[6]

Huo Y., 2021, SID Symp. Dig. Tech. Pap, V52, P753, DOI [10.1002/sdtp.14792, DOI 10.1002/SDTP.14792]

[7] PHASE-TRANSFORMATION MECHANISMS INVOLVED IN EXCIMER-LASER CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS [J].

IM, JS ;

KIM, HJ ;

THOMPSON, MO .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1969-1971

[8]

Jeong I.H., 2013, SID Symposium Digest of Technical Papers, V44, P1368, DOI [DOI 10.1002/J.2168-0159.2013.TB06495.X, 10.1002/j.2168-0159.2013.tb06495.x]

[9] UV-pretreatment- and near-infrared rapid thermal annealing-enhanced dehydrogenation for a-Si:H thin films at 400°C [J].

Ji, Sanghyun ;

Hwang, Chi-Sun ;

Jeong, Pilseong ;

Lee, Sungyong ;

Lee, Kwang Soon .

THIN SOLID FILMS, 2016, 598 :226-229

[10]

Jiin-Jou Lih, 2004, Journal of the Society for Information Display, V12, P367, DOI 10.1889/1.1847734

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