Noncovalent Interactions Induced by Fluorination of the Central Core Improve the Photovoltaic Performance of A-D-A′-D-A-Type Nonfused Ring Acceptors

被引:38
作者
Zhou, Xia [1 ]
Pang, Shuting [1 ]
Wu, Baoqi [1 ]
Zhou, Jiadong [1 ]
Tang, Haoran [1 ]
Lin, Kaiwen [2 ]
Xie, Zengqi [1 ]
Duan, Chunhui [1 ]
Huang, Fei [1 ]
Cao, Yong [1 ]
机构
[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China
[2] Univ Elect Sci & Technol China, Zhongshan Inst, Dept Mat & Food, Zhongshan 528402, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
organic solar cells; nonfused ring acceptors; fluorination; noncovalent interactions; benzotriazole; ORGANIC SOLAR-CELLS; ELECTRON-ACCEPTOR; HIGH-EFFICIENCY; STRATEGY; ENABLES;
D O I
10.1021/acsaem.2c01179
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nonfused ring acceptors (NFRAs) have blazed a trail in achieving high-efficiency organic solar cells (OSCs) from low-cost materials due to their simple synthesis. In this work, two A-D-A'-D-A-type NFRAs, comprising benzotriazole or ditluorinated benzotriazole as the electron-deficient core, namely, BTz-HD and ffBTz-HD, were synthesized via direct arylation coupling reaction. The influence of fluorination of the central core on molecular packing and the photovoltaic performance of the nonfused acceptors were investigated by analyzing the single-crystal structures of two model compounds BTz-2T (fluorine free) and ffBTz-2T (fluorinated). Compared with BTz-2T, ffBTz-2T exhibits a more planar molecular skeleton and forms a slip-stack stacking with pi-pi stacking distances of 3.58 and 3.67 angstrom owing to the existence of F center dot center dot center dot S, S center dot center dot center dot H, and H center dot center dot center dot F noncovalent interactions. These characteristics favor the ordered and compact stacking of ffBTz-HD in the solid state, which facilitated charge transport and inhibited charge recombination in solar cells. These merits endowed the ffBTz-HD-based OSC with a higher short-circuit current density and fill factor than the BTz-HD-based OSC. As a result, a higher power conversion efficiency of 10.56% has been achieved by ffBTz-HD. The structure-property relationship unraveled in this study is beneficial to the development of more efficient NFRAs for application in OSCs.
引用
收藏
页码:7710 / 7718
页数:9
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