Factors Affecting the Growth of SiC Nano-whiskers

被引：16

作者：

Chen, Y. F. ^{[1
]}

Liu, X. Z. ^{[1
]}

Deng, X. W. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2010年 / 26卷 / 11期

关键词：

SiC; Nano-whisker; Vapor-liquid-solid; SILICON-CARBIDE NANOWIRES; CHEMICAL-VAPOR-DEPOSITION; ELECTRICAL-TRANSPORT PROPERTIES; LIQUID-SOLID MECHANISM; EMISSION; NICKEL;

D O I：

10.1016/S1005-0302(10)60172-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently developed for high-temperature, high-power, and high-radiation conditions, in which conventional semiconductors cannot be adequately performed. In this paper, SiH4 and C2H2 were used to synthesize SiC nano-whiskers. Metal Ni was the catalyst. SiC nano-whiskers were grown by vapor-liquid-solid mechanism. The effects of the H-2 flow rate, growth temperature, catalyst thickness and growth pressure to grow SiC nano-whiskers were studied. 3C-SiC thin film and nano-tips can be synthesized by controlling the growth conditions.

引用

收藏

页码：1041 / 1046

页数：6

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