Simulation of atomic-scale surface migration in homoepitaxial growth using embedded-atom method potentials for gold

被引：7
|
作者：
Takano, J
Takai, O
Kogure, Y
Doyama, M
机构：
[1] Nagoya Univ, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan
[2] Teikyo Univ Sci & Technol, Dept Mat, Yamanashi 40901, Japan
来源：
THIN SOLID FILMS | 1998年 / 318卷 / 1-2期
关键词：
homoepitaxial growth; thin films; embedded-atom method;
D O I：
10.1016/S0040-6090(97)01137-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Surface adsorption and surface diffusion are simulated by use of molecular dynamics method and N-body embedded-atom method (EAM) potential for gold. The relation between the growth rate of thin films and the packing density of atoms using Monte Carlo simulation is obtained. The results of the molecular dynamics method and the Monte Carlo method were combined, so that the growth process of thin films at elevated temperatures, which is too long to calculate, can be studied. (C) 1998 Elsevier Science S.A.
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页码：52 / 56
页数：5
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