Selective growth of CdTe on Si(211): First-principle calculations

被引：5

作者：

Huang, Y. ^{[1
]}

Chen, X. S. ^{[1
]}

Duan, H. ^{[1
]}

Lu, W. ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2007年 / 36卷 / 08期

关键词：

Si(211); As-passivation; CdTe; selective growth; first-principle; density of states (DOS);

D O I：

10.1007/s11664-007-0134-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The adsorption of CdTe layers on clean and As-passivated Si(211) substrates has been simulated by first-principle calculations in this study. Based on the simulation results, we theoretically show the important roles of the As-4 passivation during the epitaxial growth. Arsenic can saturate part of the dangling bonds and weaken the surface states. The partial passivation finally induces the B-face polarity selection automatically. This conclusion can provide further explanations for the successful growth of large area high-quality CdTe(211)B layers on the Si(211) substrates.

引用

收藏

页码：925 / 930

页数：6

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