Zirconia growth on zirconium carbide single crystals by oxidation

被引:29
作者
Bellucci, A
Gozzi, D
Kimura, T
Noda, T
Otani, S
机构
[1] Univ Roma La Sapienza, Dipartimento Chim, I-00185 Rome, Italy
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 305, Japan
关键词
zirconium carbide; oxidation; zirconia; refractory carbides; interfaces;
D O I
10.1016/j.surfcoat.2004.05.035
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Zirconium carbide is an important high-temperature structural material. Results of oxidation studies reported in the literature show a complex picture. In this investigation, three ZrC single crystals have been oxidized at high temperature and in Ar/O-2 mixtures at O-2 composition, respectively, (105.5 +/- 0.3) ppm for ZrC-A, (119 +/- 2) ppm for ZrC-B and (130.7 +/- 0.5) ppm for ZrC-C. The analysis of the kinetic data acquired through an apparatus based on two oxygen sensors, appropriately connected to a Quadrupole Mass Spectrometer (QMS), has been matched with the characterization of the oxidized samples. This has been performed by Auger Electron Spectroscopy (AES), Electron Probe Micro-Analysis (EPMA), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and Raman techniques. Through an appropriate processing of the experimental data, it has been possible to identify the main steps of the high-temperature ZrC oxidation process: (i) ZrC substrate interacts with O-2 producing C that is retained into the sample. According to AES analysis, carbon has been detected in the amorphous state; (ii) during the cooling treatment, due to crack formation, a relatively small fraction of C is burnt as revealed by CO and CO2 formation. The characterization of the oxidized samples by XRD and Raman techniques has identified the presence of both the ZrO2-c and ZrO2-m phases. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:294 / 302
页数:9
相关论文
共 28 条
[1]  
ASKAROVA LK, 1994, J INORG CHEM, V39, P5710
[2]  
BARNIER P, 1988, EUR J SOL STATE INOR, V25, P495
[3]   Rutile growth mechanism on TiC monocrystals by oxidation [J].
Bellucci, A ;
Gozzi, D ;
Nardone, M ;
Sodo, A .
CHEMISTRY OF MATERIALS, 2003, 15 (05) :1217-1224
[4]   Structural characterization of TiO2 films obtained by high temperature oxidation of TiC single crystals [J].
Bellucci, A ;
Di Pascasio, F ;
Gozzi, D ;
Loreti, S ;
Minarini, C .
THIN SOLID FILMS, 2002, 405 (1-2) :1-10
[5]  
Cignini PL, 1998, ELEC SOC S, V98, P349
[6]  
DAVIS LE, HDB AUGER ELECT SPEC
[7]  
DUFOUR LC, 1967, CR ACAD SCI C CHIM, V265, P171
[8]   Weak interaction of oxygen with some refractory carbides [J].
Gozzi, D ;
Cascino, G ;
Loreti, S ;
Minarini, C ;
Shimada, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (04) :J15-J24
[9]   MATERIAL SELECTION FOR HARD COATINGS [J].
HOLLECK, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :2661-2669
[10]  
*INT CTR DIFFR DAT, 491642 JCPDS