Unexpected termination switching and polarity compensation in LaAlO3/SrTiO3 heterostructures

被引:10
|
作者
Singh-Bhalla, Guneeta [1 ,2 ]
Rossen, Pim B. [3 ]
Palsson, Gunnar K. [2 ,4 ,12 ]
Mecklenburg, Matthew [5 ]
Orvis, Thomas [6 ]
Das, Sujit [3 ]
Tang, Yun-Long [3 ]
Suresha, Jaganatha S. [7 ]
Yi, Di [3 ,13 ]
Dasgupta, Abhigyan [1 ]
Doenning, David [8 ,9 ]
Ruiz, Victor G. [8 ,9 ]
Yadav, Ajay K. [3 ]
Trassin, Morgan [3 ,14 ]
Heron, John T. [3 ,15 ]
Fadley, Charles S. [2 ,4 ]
Pentcheva, Rossitza [10 ,11 ]
Ravichandran, Jayakanth [6 ]
Ramesh, Ramamoorthy [1 ,2 ,3 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA
[5] Univ Southern Calif, Core Ctr Excellence Nano Imaging CNI, Los Angeles, CA 90089 USA
[6] Univ Southern Calif, Mork Family Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA
[7] Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[8] Univ Munich, Dept Earth & Environm Sci, DE-80333 Munich, Germany
[9] Univ Munich, Ctr Nanosci CENS, DE-80333 Munich, Germany
[10] Univ Duisburg Essen, Dept Phys, D-47057 Duisburg, Germany
[11] Univ Duisburg Essen, Ctr Nanointegrat CENIDE, D-47057 Duisburg, Germany
[12] Uppsala Univ, Dept Phys & Astron, S-75120 Uppsala, Sweden
[13] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[14] Swiss Fed Inst Technol, Dept Mat, Vladimir Prelog Weg 4, CH-8093 Zurich, Switzerland
[15] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
来源
PHYSICAL REVIEW MATERIALS | 2018年 / 2卷 / 11期
基金
瑞典研究理事会;
关键词
INTERFACES; CONVERSION; GAS;
D O I
10.1103/PhysRevMaterials.2.112001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polar crystals composed of charged ionic planes cannot exist in nature without acquiring surface changes to balance an ever-growing dipole. The necessary changes can manifest structurally or electronically as observed in semiconductors and ferroelectric materials through screening charges and/or domain wall formation. In the case of prototypical polar complex oxides such as the LaAlO3/SrTiO3 system the nature of screening charges for different interface terminations is not symmetric. Electron accumulation is observed near the LaAlO3/TiO2-SrTiO3 interface, while the LaAlO3/SrO-SrTiO3 stack is insulating. Here, we observe evidence for an asymmetry in the surface chemical termination for nominally stoichiometric LaAlO3 films in contact with the two different surface layers of SrTiO3 crystals, TiO2 and SrO. Using several element-specific probes, we find that the surface termination of LaAlO3 remains AlO2 irrespective of the starting termination of SrTiO3 substrate surface. We use a combination of cross-plane tunneling measurements and first-principles calculations to understand the effects of this unexpected termination on band alignments and polarity compensation of LaAlO3/SrTiO3 heterostructures. An asymmetry in LaAlO3 polarity compensation and resulting electronic properties will fundamentally limit atomic level control of oxide heterostructures.
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页数:7
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