Effect of wafer rotation on photoresist stripping in supercritical CO2

被引:4
作者
Saga, Koichiro [1 ]
Kuniyasu, Hitoshi [1 ]
Hattori, Takeshi [1 ]
Saito, K. [2 ]
Mizobata, I. [2 ]
Iwata, T. [2 ]
Hirae, S. [2 ]
机构
[1] Sony Corp, Atsugi, Kanagawa 2438585, Japan
[2] Dainippon Screen Mfg Co Ltd, Kyoto 6028585, Japan
来源
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII | 2008年 / 134卷
关键词
supercritical CO2; photoresist stripping; wafer rotation; low-k film;
D O I
10.4028/www.scientific.net/SSP.134.355
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:355 / +
页数:3
相关论文
共 3 条
[1]  
KORZENSKI M, 208 M EL SOC LOS ANG
[2]  
KORZENSKI M, 204 M EL SOC ORL
[3]   Etching of silicon oxide films in supercritical carbon dioxide [J].
Saga, K ;
Kuniyasu, H ;
Hattori, T ;
Yamada, K ;
Azuma, T .
ULTRA CLEAN PROCESSING OF SILICON SURFACES VII, 2005, 103-104 :115-118