Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications

We created tri-gate sub-100 nm In0.53Ga0.47As metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with a bi-layer Al2O3/HfO2 gate stack and investigated the scaling effects on equivalent-oxide-thickness (EOT) and fin-width (W-fin) at gate lengths of sub-100 nm. For L-g = 60 nm In0.53Ga0.47As tri-gate MOSFETs, EOT and W-fin scaling were effective for improving electrostatic immunities such as subthreshold swing and drain-induced-barrier-lowering. Reliability characterization for In0.53Ga0.47As Tri-Gate MOSFETs using constant-voltage-stress (CVS) at 300K demonstrates slightly worse V-T degradation compared to planar InGaAs MOSFET with the same gate stack and EOT. This is due to the effects of both of the etched fin's sidewall interfaces.