Scaling laws of nonlinear silicon nanophotonics

被引：9

作者：

Jalali, B ^{[1
]}

Boyraz, O ^{[1
]}

Dimitropoulos, D ^{[1
]}

Raghunathan, V ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

Optoelectronic Integration on Silicon II | 2005年 / 5730卷

关键词：

silicon photonics; nonlinear optics; integrated optics; silicon Raman lasers; silicon Raman amplifier; SELF-PHASE-MODULATION; WAVE-GUIDES; MU-M; RAMAN AMPLIFICATION; RECOMBINATION VELOCITY; TRANSMISSION; ABSORPTION; WAFERS;

D O I：

10.1117/12.590831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scaling properties of two photon absorption, free carrier scattering, Raman scattering and Kerr effect in silicon waveguides is reported. It is shown that the dependence of minority carrier lifetime on waveguide dimensions has a profound impact on the performance of nonlinear optical devices built using silicon waveguides.

引用

页码：41 / 49

页数：9

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