Influence of nucleation density on film quality, growth rate and morphology of thick CVD diamond films

被引:44
作者
Tang, CJ [1 ]
Neves, AJ [1 ]
Fernandes, AJS [1 ]
机构
[1] Univ Aveiro, Dept Phys, P-3810 Aveiro, Portugal
关键词
diamond growth and characterization; nucleation density; growth rate; microwave plasma CVD;
D O I
10.1016/S0925-9635(03)00179-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optimum growth parameters of our 5 kW microwave plasma CVD reactor were obtained using CH4/H-2/O-2 plasma and high quality transparent films can be produced reproducibly. Among the films prepared in this system, the film of best quality has very smooth crystalline facets free of second nucleation and the full width at half maximum (FWHM) of the diamond Raman peak is 2.2 cm(-1), as narrow as that of IIa natural diamond. For this study, diamond films were grown on silicon substrates with low (10(4)-10(5) cm(-2)) and high nucleation densities ( >10(10) cm(-2)), respectively. From the same growth run, a highly <110> textured 300 mum thick white diamond film with a growth rate of 2.4 mum/h was obtained from high nucleation densities (>10(10) cm(-2)), and a white diamond film of 370 mum in thickness with a higher growth rate of 3 mum/h was obtained from low nucleation densities (5 x 10(4)-10(5) cm(-2)) too. The effect of nucleation density on film quality, growth rate, texture and morphology was studied and the mechanism was discussed. Our results suggest that under suitable growth conditions, nucleation density has little effect on film quality and low nucleation density results in higher growth rate than high nucleation density due to less intense grain growth competition. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1488 / 1494
页数:7
相关论文
共 13 条
[1]   HYDROGEN IN POLYCRYSTALLINE DIAMOND - AN INFRARED-ANALYSIS [J].
DISCHLER, B ;
WILD, C ;
MULLERSEBERT, W ;
KOIDL, P .
PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) :217-221
[2]   CVD diamond films: from growth to applications [J].
Gicquel, Alix ;
Hassouni, Khaled ;
Silva, Francois ;
Achard, Jocelyn .
CURRENT APPLIED PHYSICS, 2001, 1 (06) :479-496
[3]   Dynamic growth effects during low-pressure deposition of diamond films [J].
Gilbert, DR ;
Singh, R ;
Clarke, R ;
Murugkar, S .
APPLIED PHYSICS LETTERS, 1997, 70 (15) :1974-1976
[4]   UNUSUALLY HIGH THERMAL-CONDUCTIVITY IN DIAMOND FILMS [J].
GRAEBNER, JE ;
JIN, S ;
KAMMLOTT, GW ;
HERB, JA ;
GARDINIER, CF .
APPLIED PHYSICS LETTERS, 1992, 60 (13) :1576-1578
[5]   OPTICAL APPLICATIONS OF POLYCRYSTALLINE DIAMOND [J].
KOIDL, P ;
KLAGES, CP .
DIAMOND AND RELATED MATERIALS, 1992, 1 (10-11) :1065-1074
[6]   IDENTIFICATION OF DEFECTS AND IMPURITIES IN CHEMICAL-VAPOR-DEPOSITED DIAMOND THROUGH INFRARED-SPECTROSCOPY [J].
MCNAMARA, KM ;
WILLIAMS, BE ;
GLEASON, KK ;
SCRUGGS, BE .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2466-2472
[7]  
PAN LS, 1995, DIAMOND ELECT PROPER, P105
[8]  
PRELAS MA, 1996, HDB IND DIAMONDS DIA, P901
[9]   Monitoring the quality of diamond films using Raman spectra excited at 514.5 nm and 633 nm [J].
Sails, SR ;
Gardiner, DJ ;
Bowden, M ;
Savage, J ;
Rodway, D .
DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) :589-591
[10]   Growth of high quality large grained diamond films on mirror-polished silicon without surface pretreatment [J].
Tang, CJ ;
Neves, A ;
Fernandes, A .
DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) :251-256