SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen

被引：62

作者：

Fukatsu, S

Ishikawa, Y

Saito, T

Shibata, N

机构：

[1] Univ Tokyo, Dept Pure & Appl Sci, Meguro Ku, Tokyo 1538902, Japan

[2] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 26期

关键词：

D O I：

10.1063/1.121674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiGe-based semiconductor-on-insulator (SOI) substrates have been successfully created by the separation-by-implanted-oxygen technique. Low-energy oxygen ion implantation was performed at 25 kV on a strain-relieved Si0.82Ge0.18 virtual substrate grown on Si(001). A good SOI geometry with a 25-nm top SiGe layer was obtained over a dose window of 2-2.5X10(17) cm(-2), and a flat SiGe surface and sharp SiGe/Si0(2) interfaces were achieved at a low substrate temperature of 550 degrees C. Compositional analysis shows that the top SiGe layer nearly conserves the same composition as the underlying alloy substrate. (C) 1998 American Instutute of Physics.

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页码：3485 / 3487

页数：3

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