Analysis of GaAs Surface Etching During Droplet Epitaxy Process (Monte Carlo Simulation)

被引：0
|
作者：
Vasilenko, Maxim A. [1 ]
Shwartz, Nataliya L. [1 ,2 ]
机构：
[1] Novosibirsk State Tech Univ, Novosibirsk, Russia
[2] RAS, AV Rzhanov Inst Semicond Phys, SB, Novosibirsk, Russia
来源：
2015 16TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES | 2015年
关键词：
GaAs; droplet epitaxy; etching; Monte Carlo;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A kinetic lattice Monte Carlo model of local droplet etching of A(3)B(5) semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.
引用
收藏
页码：16 / 19
页数：4
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