MEMS for wireless communications: 'from RF-MEMS components to RF-MEMS-SiP'

被引:164
作者
Tilmans, HAC [1 ]
De Raedt, W [1 ]
Beyne, E [1 ]
机构
[1] IMEC VZW, Div Microsyst, Components & Packaging, B-3001 Louvain, Belgium
关键词
D O I
10.1088/0960-1317/13/4/323
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Wireless communication has led to an explosive growth of emerging consumer and military applications of radio frequency (RF), microwave and millimeter wave circuits and systems. Future personal (hand-held) and ground communications systems as well as communications satellites necessitate the use of highly integrated RF front-ends, featuring small size, low weight, high performance and low cost. Continuing chip scaling has contributed to the extent that off-chip, bulky passive RF components, such as high-Q inductors, ceramic and SAW filters, varactor diodes and discrete PIN diode switches, have become limiting. Micro-machining or MEMS technology is now rapidly emerging as an enabling technology to yield a new generation of high-performance RF-MEMS passives to replace these off-chip passives in wireless communication (sub)systems. This paper reviews the progress in RF-MEMS from a device and integration perspective. The worldwide state-of-the-art of RF-MEMS devices including switches, variable capacitors, resonators and filters are described. Next, it Is stipulated how integration of RF-MEMS passives with other passives (as inductors, LC filters, SAW devices, couplers and power dividers) and, active circuitry (ASICs, RFICs) can lead to the so-called RF-MEMS system-in-a-package (RF-MEMS-SiP) modules. The evolution of the RF-MEMS-SIP technology is illustrated using IMEC's microwave multi-layer thin-film MCM-D technology which today already serves as a technology platform for RF-SiP.
引用
收藏
页码:S139 / S163
页数:25
相关论文
共 143 条
[11]  
BUCK DC, 1994, Patent No. 5367136
[12]   Integrated RF and microwave components in BiCMOS technology [J].
Burghartz, JN ;
Soyuer, M ;
Jenkins, KA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1559-1570
[13]   Microwave inductors and capacitors in standard multilevel interconnect silicon technology [J].
Burghartz, JN ;
Soyuer, M ;
Jenkins, KA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (01) :100-104
[14]   Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates [J].
Burghartz, JN ;
Edelstein, DC ;
Jenkins, KA ;
Kwark, YH .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (10) :1961-1968
[15]   Status and trends of silicon RF technology [J].
Burghartz, JN .
MICROELECTRONICS RELIABILITY, 2001, 41 (01) :13-19
[16]   Integration of CPW quadrature couplers in multilayer thin-film MCM-D [J].
Carchon, G ;
De Raedt, W ;
Nauwelaers, B .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (10) :1770-1776
[17]  
Carchon G, 2001, MICROWAVE J, V44, P96
[18]   Design and characterization of CPW feedthroughs in multi-layer thin-film MCM-D [J].
Carchon, G ;
Di Monaco, O ;
Vaesen, K ;
Brebels, S ;
De Raedt, W ;
Nauwelaers, B .
RAWCON2000: 2000 IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2000, :167-170
[19]   Accurate measurement and characterization up to 50 GHz of CPW-based integrated passives in microwave MCM-D [J].
Carchon, G ;
Brebels, S ;
De Raedt, W ;
Nauwelaers, B .
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, 2000, :459-464
[20]  
CARCHON G, 2002, IMAPS EUROPE POL, P255