Raman investigations of GaN films grown by pulsed laser deposition

被引：13

作者：

Klose, M ^{[1
]}

Dassow, R ^{[1
]}

Gross, M ^{[1
]}

Schroder, H ^{[1
]}

机构：

[1] Deutsch Forsch Anstalt Luft & Raumfahrt, Phys Tech Inst, D-70569 Stuttgart, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

pulsed laser deposition; Raman scattering; electron concentration and mobilities;

D O I：

10.1016/S0022-0248(98)00243-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN epitaxial films grown by pulsed laser deposition have been investigated by Raman scattering measurements. Room temperature electron concentrations and mobilities of films grown on GH-SiC were estimated by A(1)(LO) mode analyses according to the theory of plasmon-coupled modes yielding values of about n = 5 x 10(16) cm(-3) and mu = 550 cm(2)/V . s, respectively. The Raman microprobe has served to explore the homogeneity of the films with respect to distributions of the residual strain and carrier concentration. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：666 / 671

页数：6

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