Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode

被引：22

作者：

Benmaza, H. ^{[1
]}

Akkal, B. ^{[1
]}

Abid, H. ^{[1
]}

Bluet, J. M. ^{[2
]}

Anani, M. ^{[1
]}

Bensaad, Z. ^{[1
]}

机构：

[1] Univ Djillali Liabes Sidi Bel Abbes, AML, Lab Materiaux Appl, Fac Sci Ingn, Sidi Bel Abbes 22000, Algeria

[2] INSA, Phys Mat Lab, Lyon, France

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 01期

关键词：

Schottky diode; barrier height; inhomogeneities; Ni/SiC-6H material;

D O I：

10.1016/j.mejo.2007.10.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two models have been used in order to explain the anomalies observed in a Ni/SiC-6H Schottky n-type diode I(V) characteristic. Both, parallel conduction and potential fluctuation models showed that the barrier's height is around a mean value of 1.86 V, corresponding to a factor of ideality of n = 1. Another conclusion was that <(phi(i)(B))over bar> phi(C)(B) = 1.88 V. It has been, also, explained why the Arrhenius or Richardson plot (ln(I-s/T-2) versus 1/T) is not linear and why the area of the low barrier height A,, representing a defective zone, is approximately about 0.12% of the total area contact. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：80 / 84

页数：5

共 10 条

[1] Schottky-barrier behavior of metals on n- and p-type 6H-SiC -: art. no. 075312 [J].

Aboelfotoh, MO ;

Fröjdh, C ;

Petersson, CS .

PHYSICAL REVIEW B, 2003, 67 (07)

[2] Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers [J].

Defives, D ;

Noblanc, O ;

Dua, C ;

Brylinski, C ;

Barthula, M ;

Aubry-Fortuna, V ;

Meyer, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :449-455

[3] PARALLEL SILICIDE CONTACTS [J].

OHDOMARI, I ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3735-3739

[4] Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements [J].

Raynaud, C ;

Isoird, K ;

Lazar, M ;

Johnson, CM ;

Wright, N .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :9841-9847

[5]

RODERICK EH, 1988, METALS SEMICONDUCTOR, pCH3

[6] Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC [J].

Smith, SR ;

Evwaraye, AO ;

Mitchel, WC .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) :301-304

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH5

[8] ELECTRON-TRANSPORT AT METAL-SEMICONDUCTOR INTERFACES - GENERAL-THEORY [J].

TUNG, RT .

PHYSICAL REVIEW B, 1992, 45 (23) :13509-13523

[9] BARRIER INHOMOGENEITIES AT SCHOTTKY CONTACTS [J].

WERNER, JH ;

GUTTLER, HH .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1522-1533

[10] Investigation of microplasma breakdown in 4H silicon carbide [J].

Zimmermann, U ;

Hallen, A ;

Konstantinov, AO ;

Breitholtz, B .

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 :151-156

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