Heterogeneous Integration of Uni-Travelling-Carrier Photodiodes using Micro-Transfer-Printing on a Silicon-Nitride Platform

被引：6

作者：

Maes, Dennis ^{[1
,2
]}

Roelkens, Gunther ^{[1
]}

Zaknoune, Mohammed ^{[2
]}

de Beeck, Camiel Op ^{[1
]}

Poelman, Stijn ^{[1
]}

Billet, Maximilien ^{[1
]}

Muneeb, Muhammad ^{[1
]}

Lemey, Sam ^{[1
]}

Peytavit, Emilien ^{[2
]}

Kuyken, Bart ^{[1
]}

机构：

[1] Univ Ghent, Dept Informat Technol INTEC, Imec, Technol Pk Zwijnaarde, B-9052 Ghent, Belgium

[2] Univ Lille, Inst Elect Microelect & Nanotechnol IEMN, F-59652 Villeneuve Dascq, France

来源：

2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC) | 2021年

关键词：

D O I：

10.1109/CLEO/Europe-EQEC52157.2021.9542787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed photodiodes often compromise responsivity in exchange for a reduced footprint. However, using waveguide photodiodes circumvents this limitation [1] . We combine uni-travelling-carrier photodiodes (UTC PDs) on a silicon nitride (SiN) photonic platform to achieve both high responsivity and high speed detectors. The SiN-platform has excellent properties such as low-loss waveguides and does not suffer from two-foton absorption at high optical power. A high responsivity is obtained through evanescent coupling of waveguide UTC photodiodes to SiN waveguides while still maintaining a small footprint.

引用

页数：1

共 27 条

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