Detection of heavy metal ions using meander gated GaN HEMT sensor

被引：20

作者：

Mishra, Shivanshu ^{[1
,2
]}

Kachhawa, Pharyanshu ^{[1
,2
]}

Thakur, Rajiv Ranjan ^{[1
,2
]}

Jain, Amber Kumar ^{[1
]}

Singh, Kuldip ^{[1
]}

Chaturvedi, Nidhi ^{[1
,2
]}

机构：

[1] CSIR Cent Elect Engn Res Inst, Pilani, Rajasthan, India

[2] Acad Sci & Innovat Res, Ghaziabad, Uttar Pradesh, India

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2021年 / 332卷

关键词：

GaN HEMT; Heavy metals; Mercury; Lead; Copper and zinc ions; Meander gated structure; FLOW-INJECTION; WATER SAMPLES; SEA-WATER; MERCURY; ZINC; ELEMENT; LEAD;

D O I：

10.1016/j.sna.2021.113119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a fast and simplistic AlGaN/GaN high electron mobility transistor (HEMT) for the de-tection of heavy metals such as mercury, lead, copper and zinc in water with a dynamic range of 1 nM to 1 mM. Four device designs have been fabricated where the gate structure and the distance between the source and the drain have been varied. It is observed that the device with meander gated (MG) structure and larger sensing area showed better response. A detailed analysis of the surface of the samples has been also investigated using SEM, EDS and Raman spectroscopy which confirms the re-usability of the sensor for a longer period of time. The response of the sensor stabilizes at 35 and 27 s for mercury and copper ions respectively. The response time of the sensor also shows a concentration dependent behavior. The sensor exhibits the high sensitivities of 31, 38, 35, and 24 mV/decade [M] for mercury, copper, zinc and lead ions respectively. (c) 2021 Elsevier B.V. All rights reserved.

引用

页数：10

共 49 条

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