Demonstration of a High-Efficiency Short-Cavity III-V-on-Si C-Band DFB Laser Diode

被引：11

作者：

Rahimi, Javad ^{[1
]}

Van Kerrebrouck, Joris ^{[2
]}

Haq, Bahawal ^{[3
]}

Bauwelinck, Johan ^{[2
]}

Roelkens, Gunther ^{[1
]}

Morthier, Geert ^{[1
]}

机构：

[1] Univ Ghent, Dept Informat Technol INTEC, Photon Res Grp, IMEC, B-9052 Ghent, Belgium

[2] Univ Ghent, Dept Informat Technol INTEC, IDLab, IMEC, B-9052 Ghent, Belgium

[3] GlobalFoundries, D-01109 Dresden, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2022年 / 28卷 / 03期

关键词：

Silicon; Waveguide lasers; Optical device fabrication; Optical fibers; Distributed feedback devices; C-band; Gratings; Heterogeneous integration; direct modulation; distributed feedback lasers; wall-plug efficiency; DEPENDENCE; THRESHOLD;

D O I：

10.1109/JSTQE.2021.3122552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we demonstrate a high wall-plug efficiency and low threshold current for heterogeneously integrated III-V-on-Silicon distributed feedback (DFB) lasers. Above 12% wall plug efficiency is achieved for a 200 mu m long DFB laser diode at 25 degrees C. Up to two times 6 mW of optical power is coupled into the silicon waveguide and more than 40 dB side-mode suppression ratio is obtained. We also discuss the non-return-to-zero on-off keying modulation at 20 Gb/s and the transmission over a 2 km long optical fiber.

引用

页数：6

共 23 条

[1] Direct and Electroabsorption Modulation of a III-V-on-Silicon DFB Laser at 56 Gb/s [J].

Abbasi, Amin ;

Moeneclaey, Bart ;

Verbist, Jochem ;

Yin, Xin ;

Bauwelinck, Johan ;

Duan, Guang-Hua ;

Roelkens, Gunther ;

Morthier, Geert .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2017, 23 (06)

[2] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].

ADAMS, AR ;

ASADA, M ;

SUEMATSU, Y ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624

[3] MODELING OF DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS WITH AXIALLY-VARYING PARAMETERS [J].

AGRAWAL, GP ;

BOBECK, AH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) :2407-2414

[4]

[Anonymous], 2018, 2018 23 OPT COMM C O

[5] Photonic integration for UV to IR applications [J].

Blumenthal, Daniel J. .

APL PHOTONICS, 2020, 5 (02)

[6] 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission [J].

Diamantopoulos, Nikolaos-Panteleimon ;

Yamaoka, Suguru ;

Fujii, Takuro ;

Nishi, Hidetaka ;

Takeda, Koji ;

Tsuchizawa, Tai ;

Kakitsuka, Takaaki ;

Matsuo, Shinji .

PHOTONICS, 2021, 8 (02) :1-11

[7] Electrically pumped hybrid AlGaInAs-silicon evanescent laser [J].

Fang, Alexander W. ;

Park, Hyundai ;

Cohen, Oded ;

Jones, Richard ;

Paniccia, Mario J. ;

Bowers, John E. .

OPTICS EXPRESS, 2006, 14 (20) :9203-9210

[8] Hybrid III-V on Silicon Integrated Distributed Feedback Laser and Ring Resonator for 25 Gb/s Future Access Networks [J].

Gallet, Antonin ;

Levaufre, Guillaume ;

Accard, Alain ;

Make, Dalila ;

Provost, Jean-Guy ;

Brenot, Romain ;

Shen, Alexandre ;

Lagay, Nadine ;

Decobert, Jean ;

Malhouitre, Stephane ;

Olivier, Segolene ;

Duan, Guang-Hua .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2018, 36 (08) :1498-1502

[9] Thermal dependence of the refractive index of InP measured with integrated optical demultiplexer [J].

Gini, E ;

Melchoir, H .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :4335-4337

[10] Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers [J].

Haq, Bahawal ;

Vaskasi, Javad Rahimi ;

Zhang, Jing ;

Gocalinska, Agnieszka ;

Pelucchi, Emanuele ;

Corbett, Brian ;

Roelkens, Gunther .

OPTICS EXPRESS, 2020, 28 (22) :32793-32801

← 1 2 3 →