Performance Enhancement by Gate Tunable Strain in p-type Piezoelectric FinFETs

被引：0
|
作者：
Long, Yuxiong [1 ]
Wang, Hongjuan [1 ]
Huang, Jun Z. [2 ]
Gong, Jian [3 ]
Jiang, Xiangwei [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
[2] MaxLinear Inc, Carlsbad, CA 92008 USA
[3] Inner Mongolia Univ, Sch Phys & Technol, Hohhot 010021, Peoples R China
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gate tunable strain induced by piezoelectric effect is introduced to boost the performance of p-type silicon FinFETs. The gate voltage modulated channel strain is analytically modeled based on the principle of piezoelectric effects, and the carrier transport is numerically simulated by non-equilibrium Green's function approach with strained 6-band kp Hamiltonian. The simulation results demonstrate that piezoelectric p-type FinFETs can achieve more than 20% ON state current (I-ON) enhancement and steeper subthreshold swing (SS) as compared with the devices without strain. The impact of channel length and orientation are also investigated.
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页码：185 / 187
页数：3
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