Study of unintentional arsenic incorporation into free-standing zinc-blende GaN and AlGaN layers grown by molecular beam epitaxy on GaAs substrates

被引：4

作者：

Novikov, S. V. ^{[1
]}

Zainal, N. ^{[1
]}

Foxon, C. T. ^{[1
]}

Kent, A. J. ^{[1
]}

Luckert, F. ^{[2
]}

Edwards, P. R. ^{[2
]}

Martin, R. W. ^{[2
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

基金：

英国工程与自然科学研究理事会;

关键词：

GaN; AlGaN; MBE; doping; diffusion; SIMS; electron probe microanalysis;

D O I：

10.1002/pssc.200983420

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper we have studied the unintentional incorporation of arsenic into thick (up to similar to 75 mu m) zinc-blende (cubic) GaN and AlGaN layers grown by a plasma-assisted molecular beam epitaxy (PA-MBE) on (001) GaAs substrates. We present detailed studies of As incorporation into free-standing zinc-blende (Al)GaN by secondary ion mass spectroscopy (SIMS) and electron probe microanalysis (EPMA). We demonstrate that there is no significant arsenic contamination of zinc-blende GaN layers and substrates due to diffusion of arsenic during the prolonged growths by PA-MBE. Arsenic incorporation is limited to the first few hundred nanometers of the layer and it is due to initiation phase of the growth of zinc-blende material, which involves use of arsenic as a surfactant to promote the growth of the cubic phase. These data have allowed us to determine the thickness of the unintentionally arsenic contaminated GaN region, which needs to be removed by polishing during production of freestanding zinc-blende GaN substrates. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 3 条

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[2] Free-standing zinc-blende (cubic) GaN layers and substrates [J].

Novikov, S. V. ;

Stanton, N. M. ;

Campion, R. P. ;

Foxon, C. T. ;

Kent, A. J. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) :3964-3967

[3]

Shunfeng L., 2007, APPL PHYS LETT, V90

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