Temperature effects in metal-clad semiconductor nanolasers

被引:16
|
作者
Gu, Qing [1 ]
Smalley, Joseph S. T. [1 ]
Shane, Janelle [1 ]
Bondarenko, Olesya [1 ]
Fainman, Yeshaiahu [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
基金
美国国家科学基金会;
关键词
Design co-optimization; nanoscale devices; semiconductor lasers; temperature effects; SPONTANEOUS EMISSION FACTOR; THERMAL-CONDUCTIVITY; NANOCAVITY; DEPENDENCE; LASERS; DESIGN; PILLAR; LAYER; GAP;
D O I
10.1515/nanoph-2013-0058
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As the field of semiconductor nanolasers becomes mature in terms of both the miniaturization to the true sub-wavelength scale, and the realization of room temperature devices, the integrated treatment of multiple design aspects beyond pure electromagnetic consideration becomes necessary to further advance the field. In this review, we focus on one such design aspect: temperature effects in nanolasers. We summarize recent efforts in understanding the interplay of various temperature-dependent parameters, and study their effects on optical mode and emission characteristics. Building on this knowledge, nanolasers with improved thermal performance can be designed, and their performance evaluated. Although this review focuses on metal-clad semiconductor lasers because of their suitability for dense chip-scale integration, these thermal considerations also apply to the broader field of nanolasers.
引用
收藏
页码:26 / 43
页数:18
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