Itinerant ferromagnetism and geometrically suppressed metal-insulator transition in epitaxial thin films of Ca2RuO4

被引：18

作者：

Miao, Ludi ^{[1
]}

Silwal, Punam ^{[1
]}

Zhou, Xiaolan ^{[1
]}

Stern, Ilan ^{[1
]}

Peng, Jin ^{[1
]}

Zhang, Wenyong ^{[1
]}

Spinu, Leonard ^{[2
]}

Mao, Zhiqiang ^{[1
]}

Kim, Dae Ho ^{[1
]}

机构：

[1] Tulane Univ, Dept Phys & Engn Phys, New Orleans, LA 70118 USA

[2] Univ New Orleans, Dept Phys, New Orleans, LA 70148 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

基金：

美国国家科学基金会;

关键词：

CRYSTAL;

D O I：

10.1063/1.3680250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effect of epitaxial strain on the electrical and magnetic properties of high quality Ca2RuO4 films on LaAlO3 (001) substrates. The films exhibit low temperature itinerant ferromagnetic ground state and significantly suppressed metal-insulator transition due to epitaxial strain. An anomaly in the in-plane resistivity was also observed near the Neel temperature. Symmetry analysis of anisotropic magnetoresistance suggests a phase coexistence of ferromagnetic metal and antiferromagnetic insulator in ground state. (C) 2012 American Institute of Physics. [doi:10.1063/1.3680250]

引用

页数：3

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