Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy

被引：20

作者：

Chen, Zhitao ^{[1
]}

Fujita, Kazuhisa ^{[1
]}

Ichikawa, Junki ^{[1
]}

Sakai, Yusuke ^{[1
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 08期

关键词：

MOLECULAR-BEAM EPITAXY; N-TYPE GAN; BRAGG REFLECTORS; ELECTRON TRAPS; HETEROSTRUCTURES; DISLOCATIONS; DEFECTS;

D O I：

10.1143/JJAP.50.081001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxAl1-xN lattice-matched to GaN with recording crystal quality have been grown on AlN/sapphire template by metal organic chemical vapor deposition. The width at half maximums (FWHMs) of X-ray diffraction (XRD) omega-rocking curves are as low as 100 arcsec for (0002) reflection and 248 arcsec for (10 (1) over bar2) reflection, respectively. Deep level transient spectroscopy (DLTS) technique has been employed to investigate the deep traps in InAlN. Three deep traps were observed with activation energies of E-1 = 0.351 +/- 0.018, E-2 = 0.404 +/- 0.027, and E-3 = 0.487 +/- 0.026 eV, respectively. The capture kinetic behaviors of E-1 and E-3 were investigated, and it is believed that E-1 is associated with point defects while E-3 is related to dislocations. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

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