Experimental and SCAPS simulated formamidinium perovskite solar cells: A comparison of device performance

被引:276
作者
Karthick, S. [1 ,3 ]
Velumani, S. [1 ,2 ]
Boucle, J. [3 ]
机构
[1] Inst Politecn Nacl CINVESTAV IPN, Ctr Invest & Estudios Avanzados, Program Nanosci & Nanotechnol, Av Inst Politecn Nacl 2508, Ciudad De Mexico 07360, Mexico
[2] Inst Politecn Nacl CINVESTAV IPN, Ctr Invest & Estudios Avanzados, Dept Elect Engn SEES, Av Inst Politecn Nacl 2508, Ciudad De Mexico 07360, Mexico
[3] Univ Limoges, XLIM, CNRS, UMR 7252, F-87000 Limoges, France
关键词
Perovskite solar cells; SCAPS-1D simulation; Series and shunt resistances; HALIDE PEROVSKITES; ELECTRON; LAYER;
D O I
10.1016/j.solener.2020.05.041
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this study, experimental photovoltaic performance and their numerical SCAPS-1D simulations are compared for methylammonium-free perovskite solar devices based on the formamidinium organic cation. Experimentally, it is established that the incorporation of small amounts of cesium (Cs+) and bromide (Br-) into HC (NH2)(2)Pbl(3)(FAPI) stabilizes the optically active alpha - FAPbI(3) black phase, and boost the power conversion efficiency (PCE) of associated devices from 4 to 15% under standard illumination. The effect of series and shunt resistances (R-series & R-shunt) were theoretically evaluated and discussed by modeling the electrical characteristics of the cell as a function of active layer composition, using the SCAPS-1D software. Ideal devices built without these parasitic resistances do not match the experimental trends, although they reflect the influence of bandgap edge on the photocurrent generation. Feeding the experimental R-series and R-shunt values to SCAPS allows us to interpret the main limitations to the device current-voltage characteristics. The instability of the pure FAH phase is responsible for the drastic deterioration in R-series and R-shunt ultimately influencing the fill factor. Our data clearly confirm the beneficial effect of mixed cation and mixed halides on device operation.
引用
收藏
页码:349 / 357
页数:9
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