Lateral interfaces of transition metal dichalcogenides: A stable tunable one-dimensional physics platform

被引:29
作者
Avalos-Ovando, Oscar [1 ,2 ]
Mastrogiuseppe, Diego [3 ]
Ulloa, Sergio E. [1 ,2 ]
机构
[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[2] Ohio Univ, Nanoscale & Quantum Phenomena Inst, Athens, OH 45701 USA
[3] Consejo Nacl Invest Cient & Tecn, Inst Fis Rosario, RA-2000 Rosario, Santa Fe, Argentina
关键词
INPLANE HETEROSTRUCTURES; ELECTRONIC-STRUCTURES; MOSE2; NANORIBBONS; EPITAXIAL-GROWTH; SPIN;
D O I
10.1103/PhysRevB.99.035107
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study in-plane lateral heterostructures of commensurate transition-metal dichalcogenides, such as MoS2-WS2 and MoSe2-WSe2, and find interfacial and edge states that are highly localized to these regions of the heterostructure. These are one-dimensional (1D) in nature, lying within the band gap of the bulk structure and exhibiting complex orbital and spin structure. We describe such heteroribbons with a three-orbital tight-binding model that uses first principles and experimental parameters as input, allowing us to model realistic systems. Analytical modeling for the 1D interfacial bands results in long-range hoppings due to the hybridization along the interface, with strong spin-orbit couplings. We further explore the Ruderman-Kittel-Kasuya-Yosida indirect interaction between magnetic impurities located at the interface. The unusual features of the interface states result in effective long-range exchange noncollinear interactions between impurities. These results suggest that transition-metal dichalcogenide interfaces could serve as stable, tunable 1D platform with unique properties for possible use in exploring Majorana fermions, plasma excitations, and spintronics applications.
引用
收藏
页数:11
相关论文
共 86 条
[71]   In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures [J].
Wei, Wei ;
Dai, Ying ;
Huang, Baibiao .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (23) :15632-15638
[72]   Electronic structures of in-plane two-dimensional transition-metal dichalcogenide heterostructures [J].
Wei, Wei ;
Dai, Ying ;
Sun, Qilong ;
Yin, Na ;
Han, Shenghao ;
Huang, Baibiao ;
Jacob, Timo .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (43) :29380-29386
[73]   Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides [J].
Xiao, Di ;
Liu, Gui-Bin ;
Feng, Wanxiang ;
Xu, Xiaodong ;
Yao, Wang .
PHYSICAL REVIEW LETTERS, 2012, 108 (19)
[74]   Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain [J].
Xie, Saien ;
Tu, Lijie ;
Han, Yimo ;
Huang, Lujie ;
Kang, Kibum ;
Lao, Ka Un ;
Poddar, Preeti ;
Park, Chibeom ;
Muller, David A. ;
DiStasio, Robert A., Jr. ;
Park, Jiwoong .
SCIENCE, 2018, 359 (6380) :1131-1135
[75]   Topological superconductivity at the edge of transition-metal dichalcogenides [J].
Xu, Gang ;
Wang, Jing ;
Yan, Binghai ;
Qi, Xiao-Liang .
PHYSICAL REVIEW B, 2014, 90 (10)
[76]  
Xu XD, 2014, NAT PHYS, V10, P343, DOI [10.1038/NPHYS2942, 10.1038/nphys2942]
[77]   MAGNETIC PROPERTIES OF CU-MN ALLOYS [J].
YOSIDA, K .
PHYSICAL REVIEW, 1957, 106 (05) :893-898
[78]   Topological phase and edge states dependence of the RKKY interaction in zigzag silicene nanoribbon [J].
Zare, Moslem ;
Parhizgar, Fariborz ;
Asgari, Reza .
PHYSICAL REVIEW B, 2016, 94 (04)
[79]   Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions [J].
Zhang, Chendong ;
Li, Ming-Yang ;
Tersoff, Jerry ;
Han, Yimo ;
Su, Yushan ;
Li, Lain-Jong ;
Muller, David A. ;
Shih, Chih-Kang .
NATURE NANOTECHNOLOGY, 2018, 13 (02) :152-+
[80]   Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunction [J].
Zhang, Chendong ;
Chen, Yuxuan ;
Huang, Jing-Kai ;
Wu, Xianxin ;
Li, Lain-Jong ;
Yao, Wang ;
Tersoff, Jerry ;
Shih, Chih-Kang .
NATURE COMMUNICATIONS, 2016, 7