Lateral interfaces of transition metal dichalcogenides: A stable tunable one-dimensional physics platform

被引:29
作者
Avalos-Ovando, Oscar [1 ,2 ]
Mastrogiuseppe, Diego [3 ]
Ulloa, Sergio E. [1 ,2 ]
机构
[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[2] Ohio Univ, Nanoscale & Quantum Phenomena Inst, Athens, OH 45701 USA
[3] Consejo Nacl Invest Cient & Tecn, Inst Fis Rosario, RA-2000 Rosario, Santa Fe, Argentina
关键词
INPLANE HETEROSTRUCTURES; ELECTRONIC-STRUCTURES; MOSE2; NANORIBBONS; EPITAXIAL-GROWTH; SPIN;
D O I
10.1103/PhysRevB.99.035107
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study in-plane lateral heterostructures of commensurate transition-metal dichalcogenides, such as MoS2-WS2 and MoSe2-WSe2, and find interfacial and edge states that are highly localized to these regions of the heterostructure. These are one-dimensional (1D) in nature, lying within the band gap of the bulk structure and exhibiting complex orbital and spin structure. We describe such heteroribbons with a three-orbital tight-binding model that uses first principles and experimental parameters as input, allowing us to model realistic systems. Analytical modeling for the 1D interfacial bands results in long-range hoppings due to the hybridization along the interface, with strong spin-orbit couplings. We further explore the Ruderman-Kittel-Kasuya-Yosida indirect interaction between magnetic impurities located at the interface. The unusual features of the interface states result in effective long-range exchange noncollinear interactions between impurities. These results suggest that transition-metal dichalcogenide interfaces could serve as stable, tunable 1D platform with unique properties for possible use in exploring Majorana fermions, plasma excitations, and spintronics applications.
引用
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页数:11
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