High-Speed Flexible Organic Field-Effect Transistors with a 3D Structure

被引：56

作者：

Uno, Mayumi ^{[1
,2
]}

Nakayama, Kengo ^{[1
]}

Soeda, Junshi ^{[1
]}

Hirose, Yuri ^{[1
]}

Miwa, Kazumoto ^{[1
]}

Uemura, Takafumi ^{[1
]}

Nakao, Akiko ^{[3
]}

Takimiya, Kazuo ^{[4
]}

Takeya, Jun ^{[1
]}

机构：

[1] Osaka Univ, ISIR, Osaka 5670047, Japan

[2] Technol Res Inst Osaka Prefecture, Izumi Ku, Osaka 5941157, Japan

[3] KEK, High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan

[4] Hiroshima Univ, Grad Sch Engn, Hiroshima 7398527, Japan

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 27期

关键词：

VERTICAL-CHANNEL; DISPLAYS; CIRCUITS;

D O I：

10.1002/adma.201101179

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-speed, flexible organic field-effect transistors with a 3D structure are fabricated on a plastic substrate in which vertical channels are formed to realize high response speed. With the benefit of short channel lengths, the fabricated transistors show fast dynamic switching within 250 ns, which corresponds to 4 MHz operation, even with the modest carrier mobility of 0.2 cm(2) V-1 s(-1) in organic semiconductors deposited on the vertical sidewalls.

引用

页码：3047 / +

页数：6

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