Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology

被引：22

作者：

Ioannidis, Eleftherios G. ^{[1
]}

Theodorou, Christoforos G. ^{[1
]}

Karatsori, Theano A. ^{[1
,2
]}

Haendler, Sebastien ^{[3
]}

Dimitriadis, Charalabos A. ^{[2
]}

Ghibaudo, Gerard ^{[1
]}

机构：

[1] Grenoble Inst Technol, MINATEC, Inst Microelect Electromagnetisme & Photon, Lab Hyperfrequences & Caracterisat, F-38016 Grenoble, France

[2] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[3] STMicroelectronics, F-38920 Crolles, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 05期

关键词：

Low-frequency noise (LFN); UTBB fully depleted silicon-on-insulator (FDSOI) MOSFETs; LOW-FREQUENCY NOISE;

D O I：

10.1109/TED.2015.2411678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extensive investigation of the drain-current low-frequency noise in n-channel MOSFETs issued from a 14-nm fully depleted silicon-on-insulator technology node has been carried out. The results demonstrate that the carrier number fluctuation (CNF) with correlated mobility fluctuations (CMFs) model accurately and continuously describes the 1/f noise from weak to strong inversion, from linear to saturation, and for all the back-bias conditions. It is shown that using only two parameters, i.e., the effective flat-band voltage spectral density S-Vfb,S- eff and CMF factor Omega(eff), the CNF/CMF noise model can predict the transistor 1/f noise level of all channel dimensions and under any bias conditions. Thus, it can be easily used in SPICE noise modeling for circuit simulations.

引用

页码：1574 / 1579

页数：6

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