Quantum Monte Carlo simulation of the triangular lattice in the repulsive Hubbard model

被引:0
作者
Refolio, MC [1 ]
Sancho, JML [1 ]
Rubio, J [1 ]
机构
[1] CSIC, Inst Matemat & Fis Fundamental, E-28006 Madrid, Spain
关键词
Monte Carlo simulations; semiconducting surfaces;
D O I
10.1016/S0039-6028(01)00781-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The repulsive Hubbard model for the triangular lattice in two dimensions is studied by means of a quantum Monte Carlo simulation in the grand canonical ensemble. Both on-site and nearest neighbor Coulomb interactions are taken into account. The one-electron spectral function A(k omega) is shown to gradually develop a gap as the temperature is lowered provided the Hubbard U is larger than the bandwidth. Analysis of the spin and charge structure factors (static correlation functions) shows that. while the charge factor remains featureless, the spin factor develops a strong peak very close to the M' point (2 pi /3, 0) of the small surface Brillouin zone (corresponding to the three-sublattice model). Implications for the behavior of the root3 x root3 adlayer structures on fourth-group semiconductor surfaces are briefly commented upon. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:632 / 639
页数:8
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