Effect of Ge Composition on Infrared Detecting Performance of Strain Si/Si1-x-yGexCy Heterojunction on Preferentially Etched Silicon Substrate

被引：0

作者：

Chiang, Yen-Ting ^{[1
]}

Fang, Yean-Kuen ^{[1
]}

Chou, Tse-Heng ^{[2
]}

Juang, Feng-Renn ^{[1
]}

Chen, Chei-Chang ^{[1
]}

Lin, Cheng-I ^{[1
]}

Chen, Chii-Wen ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Wufeng Inst Technol, Dept Elect Engn, Chiayi 621, Taiwan

[3] Ming Hsin Univ Sci & Technol, Dept Elect Engn, Hsinchu 30401, Taiwan

来源：

IEEE SENSORS JOURNAL | 2010年 / 10卷 / 08期

关键词：

Heterojunction; IR photodiode; Si1-x-yGexCy; strain-Si; 1.3; MU-M; RAMAN-SPECTROSCOPY; SI; STRESS; MOBILITY; PHOTODIODES; ALLOYS; LAYER;

D O I：

10.1109/JSEN.2009.2039132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The p-strain Si/i-Si1-x-yGexCy heterojunctions prepared by a rapid thermal chemical vapor deposition system on an n-Si substrate with back preferentially etched were developed for fast IR detecting applications. The stress induced by the p-strain Si/i-Si1-x-yGexCy heterojunction enhanced the carrier mobility in p-Si layer, while the preferentially etching of n-Si substrate accelerated the heat dissipating and the reduction of series resistance. As a result, the device achieved a better performance than that of the conventional one without the strain Si or the preferentially etched substrate. In addition, the effects of morphology and Ge composition in the i-Si1-x-yGexCy thin film on the IR detecting performance were investigated in details.

引用

页码：1337 / 1341

页数：5

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